CS International 2016 saw a record number of delegates and sponsors attend the event and the seventh annual CS International conference will be looking to grow this even further and build on the success of the previous events.
The 2017 conference will cover all aspects of the industry, with presentations grouped into five key themes:
Will handsets be crammed with ever more III-V content? And could GaN appear in the front-end in the coming years?
Can the best devices stem from the ultra-wide bandgap of gallium oxide? Or will they emerge from foundries processing GaN and SiC on silicon?
Are colossal LED fabs revolutionising chip manufacture? And what are the big opportunities for visible lasers?
Will GaN RF deliver the best bang per buck by increases transistor voltages, or making these devices on silicon? And what are the best options for really high frequencies?
What are the fruits of a marriage between silicon and the III-Vs? And can higher mobility materials improve microprocessors and memory?